Please use this identifier to cite or link to this item:
|Title:||Parameters influencing the performance of an IGBT gate drive|
|Authors:||Abu Khaizaran, Muhammad S.|
Palmer, Patrick R.
|Keywords:||Insulated gate bipolar transistors|
Voltage regulators - Control
Electric power distribution
Automatic control - Data processing
|Abstract:||This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice|
|Appears in Collections:||Fulltext Publications|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.