Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.11889/4355
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dc.contributor.authorAbu Khaizaran, Muhammad S.
dc.contributor.authorPalmer, Patrick R.
dc.contributor.authorWang, Yalan
dc.date.accessioned2017-03-02T07:26:50Z
dc.date.available2017-03-02T07:26:50Z
dc.date.issued2008
dc.identifier.urihttp://hdl.handle.net/20.500.11889/4355
dc.description.abstractThis paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practiceen_US
dc.language.isoen_USen_US
dc.subjectInsulated gate bipolar transistorsen_US
dc.subjectVoltage regulators - Controlen_US
dc.subjectElectric power distributionen_US
dc.subjectAutomatic control - Data processingen_US
dc.titleParameters influencing the performance of an IGBT gate driveen_US
dc.typeArticleen_US
newfileds.departmentEngineering and TechnologyEngineering and Technologyen_US
newfileds.item-access-typeopen_accessen_US
newfileds.thesis-prognoneen_US
newfileds.general-subjectnoneen_US
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