Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.11889/8307
Title: Improvement of the crystallinity of RF-magnetron-sputtered LaAlO 3 layers on silicon (100)
Authors: Sader, Edward 
Keywords: Sputtering (Physics);Magnetron sputtering
Issue Date: 1993
Publisher: Superconductor Science and Technology
Abstract: Tremendous improvement of the crystallinity of RF-magnetron-sputtered LaAIO, thin films on silicon (100) has recently been achieved by improving the vacuum prevailing prior to sputtering, particularly during thermal desorption of the artificially formed SIO,, on the surface of silicon. Additionally, the oxygen partial pressure and the substrate temperature during sputtering of these films have been carefully optimized using the appropriate phase diagram.
URI: http://hdl.handle.net/20.500.11889/8307
DOI: 10.1088/0953-2048/6/7/017
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