Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.11889/4363
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dc.contributor.authorMohammad, Baker
dc.contributor.authorRab, Muhammad Tauseef
dc.contributor.authorMohammad, Khader
dc.contributor.authorSuleman, Muhammad Aater
dc.date.accessioned2017-03-04T06:18:05Z
dc.date.available2017-03-04T06:18:05Z
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/20.500.11889/4363
dc.description.abstractDynamic cache resizing coupled with Built In Self Test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the identified locations, effectively reducing the cache size. Cache resizing approach can solve for as many faulty locations as the end user would like, while trading off on performance. Reliability and long term effect on memory such as pMOS NBTI issue is also compensated for by running BIST and implementing cache resizing architecture, hence detecting faults introduced over time. Since memory soft failures are worst at lower voltage operation dynamic cache resizing can be used to tradeoff power for performance. This approach supplements existing design time optimizations and adaptive design techniques used to enhance memory yield. Performance loss incurred due to the cache reduction is determined to be within 1%en_US
dc.language.isoen_USen_US
dc.subjectLow voltage integrated circuits - Design and constructionen_US
dc.subjectIntegrated circuits - Design and constructionen_US
dc.subjectSemiconductor storage devicesen_US
dc.subjectCache memoryen_US
dc.subjectComputer architectureen_US
dc.titleDynamic cache resizing architecture for high yield SOCen_US
dc.typeArticleen_US
newfileds.departmentEngineering and Technologyen_US
newfileds.item-access-typeopen_accessen_US
newfileds.thesis-prognoneen_US
newfileds.general-subjectnoneen_US
item.languageiso639-1other-
item.fulltextWith Fulltext-
item.grantfulltextopen-
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