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Title: Dynamic cache resizing architecture for high yield SOC
Authors: Mohammad, Baker
Rab, Muhammad Tauseef
Mohammad, Khader
Suleman, Muhammad Aater
Keywords: Low voltage integrated circuits - Design and construction;Integrated circuits - Design and construction;Semiconductor storage devices;Cache memory;Computer architecture
Issue Date: 2009
Abstract: Dynamic cache resizing coupled with Built In Self Test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the identified locations, effectively reducing the cache size. Cache resizing approach can solve for as many faulty locations as the end user would like, while trading off on performance. Reliability and long term effect on memory such as pMOS NBTI issue is also compensated for by running BIST and implementing cache resizing architecture, hence detecting faults introduced over time. Since memory soft failures are worst at lower voltage operation dynamic cache resizing can be used to tradeoff power for performance. This approach supplements existing design time optimizations and adaptive design techniques used to enhance memory yield. Performance loss incurred due to the cache reduction is determined to be within 1%
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